This listing is for a SPD08P06PGBTMA1 MOSFET Power Electronics. This MOSFET is a logic level N-channel enhancement mode power field-effect transistor and has the following parameters:
Type: MOSFET Power Electronics
Part Number: SPD08P06PGBTMA1
Voltage: 8 V
Current: 60 A
Voltage Drop: 0.20 V
Package Type: TO-220
RDS(ON): 0.037 Ohms
Pd: 6.75 W
Configuration: Single
Operating Temperature: -55°C to 175°C
Product Status | Active | |
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6.2V | |
Rds On (Max) @ Id, Vgs | 300mOhm @ 10A, 6.2V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 42W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PG-TO252-3 | |
Package / Case | | |
Base Product Number |
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