BSC0901NSATMA1 MOSFET Power Electronics
Product Description:
The BSC0901NSATMA1 is a high-performance MOSFET power electronics device designed to provide superior switching performance and power delivery. Built with silicon-on-insulator (SOI) technology, it is ideal for applications such as motor control, digital power, switching power supplies, and solar cell inverters. It offers low gate charge, low on-resistance, high frequency operation, and excellent thermal management.
Product Features:
• High frequency operation
• Low gate charge
• Low on-resistance
• Excellent thermal management
• Silicon-on-insulator (SOI) technology
• Maximum drain-source voltage of 600V
• Maximum peak current of 40A
• Maximum power dissipation of 500W
Product Status | Active | |
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.9mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PG-TDSON-8-5 | |
Package / Case | | |
Base Product Number |
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