FQT4N20LTF MOSFET Power Electronics
SOT-223-4 Package N-Channel high energy strength electronic lamp ballasts
ET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.35Ohm @ 425mA, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.2W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-223-4 | |
Package / Case |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 0.85 A, 200 V, RDS(on)=1.35 Ω(Typ.)@VGS=10 V, ID=0.425 A
• Low Gate Charge (Typ. 4 nC) • Low Crss (Typ. 6 pF)
• 100% Avalanche Tested N-Channel QFET ® MOSFET 200 V, 0.85 A, 1.40 Ω Description
• Low Level Gate Drive Requirments Allowing Direct Operation From Logic Drives.
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