FDP18N50 MOSFET Power Electronics N-Channel UniFETTM Package TO-220 switching power converter applications
N-Channel PowerTrench
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 265mOhm @ 9A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 2860 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 235W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-220-3 | |
Package / Case |
Features
• RDS(on) = 220 mΩ (Typ.) @ V GS = 10 V, I D = 9 A
• Low Gate Charge (Typ. 45 nC)
• Low C rss (Typ. 25 pF)
• 100% Avalanche Tested
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFET TM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.