Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 10mOhm @ 11.5A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 3970 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-MLP (3.3x3.3) | |
Package / Case |
Product Listing:
Product Name: ON Semiconductor FDMC6679AZ N-Channel Power MOSFET
Product Description: The ON Semiconductor FDMC6679AZ N-Channel Power MOSFET is a fully-depleted, low-voltage, high-speed device that is designed to provide superior performance, reliability and low power consumption in a wide range of applications.
Product Features:
• N-Channel
• Low voltage operation
• High speed switching
• Low power consumption
• High current capacity
• High switching frequency
• Low gate charge
• High temperature operation
• Low on-state resistance
• RoHS compliant
Product Specifications:
• Voltage Rating: 20V
• Continuous Drain Current: 27A
• Maximum Drain Source Voltage: -30V
• Drain Source On Resistance: 0.0045Ω
• Gate Threshold Voltage: 2.5V
• Maximum Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Package/Case: TO-252