N-Channel PowerTrench
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 70µA | |
Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1140 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.2W (Ta), 107W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-WDFN (3.3x3.3) | |
Package / Case |
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVTFS6H850NWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant