IRFR3607TRPBF MOSFET Power Electronics N-Channel Enhanced body diode dV dt and dI dt Package TO-252
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 46A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 140W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | D-Pak | |
Package / Case |
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt