FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 0.99mOhm @ 36A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 209 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 14965 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
The FDMS7650 is an 8-PowerTDFN package power MOSFET designed to provide high-speed switching performance and low gate charge. The advanced process technology and design of this device ensures superior RDS(on) and low gate charge, making it ideal for high current applications. Its low drain-source on-resistance and low gate charge provide low power loss and efficient switching. It is also optimized for applications demanding fast switching and high frequency operation.
This device is suitable for use in both synchronous and asynchronous switching circuits. The built-in protection features provide superior system reliability and the robust package design ensures superior thermal performance. The FDMS7650 is an ideal choice for high current applications requiring efficient switching and low power loss.
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