NTMFS4C027NT1G N-Channel 30V 0.2A (TDS) MOSFET Power Electronics 5-DFN Package Single N-Channel 30 V 52 A
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 18A, 10V | |
Vgs(th) (Max) @ Id | 2.1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.51W (Ta), 25.5W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Package / Case |
Product Listing:
Product Name: NTMFS4C027NT1G MOSFET Power Electronics
Manufacturer: ON Semiconductor
Package: 5-DFN
VDS (V): 30
ID (A): 0.027
RDS(on) (Ω): 0.08
Number of Channels: 1
VGS (V): 20
Power (W): 0.3
Pd (W): 0.45
Input Capacitance (Ciss) (pF): 860
Configuration: Single
Drain to Source Breakdown Voltage (Vdss): 30V