FQP33N10 MOSFET Power Electronics – High Power Switching Capability Low On-Resistance and Fast Switching Times
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 52mOhm @ 16.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 127W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-220-3 | |
Package / Case |
Product Listing: ON Semiconductor FQP33N10 Power MOSFET
Product Features:
• Low RDS(ON) - 0.0043 Ohm
• Low Gate Charge - 9.8 nC
• Low Gate-Source Voltage - 1.8V
• Low On-State Resistance - 0.0043 Ohm
• High Speed Switching - 175V/nS
• High Current Capability - 10A
• Low Threshold Voltage - 1.2V
• Low Input Capacitance - 12 pF
• Low Output Capacitance - 9 pF
• High Avalanche Energy - 78 mJ
• High Peak Current - 30A
• Low EMI - 5dB