BSC030P03NS3GAUMA1 MOSFET Power Electronics P-Channel OptiMOST' P3 Power-Transistor
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 3mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 3.1V @ 345µA | |
Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 14000 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PG-TDSON-8-1 | |
Package / Case |
Features
single P Channel in SuperSO8
Qualified according JEDEC1) for target applications
Ves 25 V, specially suited for notebook applications
Pb-free, RoHS compliant
·ESD>4 kV
applications: battery management, load switching
Halogen-free according to lEC61249-2 21