S29GL128P11FFI010 IC Chip High Performance Computing Data Storage 128Mbit
Memory Format | | |
Technology | FLASH - NOR | |
Memory Size | | |
Memory Organization | 16M x 8 | |
Memory Interface | Parallel | |
Write Cycle Time - Word, Page | 110ns | |
Access Time | 110 ns | |
Voltage - Supply | 2.7V ~ 3.6V | |
Operating Temperature | -40°C ~ 85°C (TA) | |
Mounting Type | | |
Package / Case | | |
Supplier Device Package | 64-FBGA (13x11) | |
Base Product Number |
Product Listing:
Product Description:
S29GL128P11FFI010 is a 128Mb (16Mx8) CMOS 3.0 Volt-only Boot Block Flash memory.
The Cypress S29GL128P11FFI010, S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Parameters:
• VCC Supply Voltage: 2.7V to 3.6V
• Read Access time: 55 ns
• Program Time: 1.5 ms (Typical)
• Endurance: 100K Cycles
• Data Retention: 20 Years
• Operating Temperature Range: -40°C to +85°C
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