S29GL256P90TFIR10 Flash Memory Chips
56-TFSOP Package 1 Gbit 128Mbit 3V Page Flash 90nm MirrorBit Process Technology
Memory Type | Non-Volatile | |
Memory Format | | |
Technology | FLASH - NOR | |
Memory Size | | |
Memory Organization | 32M x 8 | |
Memory Interface | Parallel | |
Write Cycle Time - Word, Page | 90ns | |
Access Time | 90 ns | |
Voltage - Supply | 2.7V ~ 3.6V | |
Operating Temperature | -40°C ~ 85°C (TA) | |
Mounting Type | | |
Package / Case | | |
Supplier Device Package | 56-TSOP |
General Description The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density,better performance and lower power consumption. Distinctive Characteristics Single 3V read/program/erase (2.7-3.6 V) Enhanced VersatileI/O™ control – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65to VCC 90 nm MirrorBit process technology 8-word/16-byte page read buffer 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
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