IRG4BC20FDPBF IGBT Power Module - High Current Ultra-Low VCE(sat) for Industrial Applications
Product Description:
IRG4BC20FDPBF IGBT Power Module is designed to offer superior performance in a variety of applications. This module features an insulated-gate bipolar transistor (IGBT) with a freewheeling diode. It is capable of delivering high current control, high switching speeds, and low power losses. With its wide range of operating voltages, this power module is suitable for a variety of power electronics applications.
Features:
• 600V IGBT
• Freewheeling Diode
• High Current Control
• High Switching Speeds
• Low Power Losses
• Wide Operating Voltage Range
• High Operating Temperature Range
• Low Thermal Resistance
• High Surge Current Capability
• High Quality Isolation
• Cost-Effective Design
Specifications:
• Collector-Emitter Voltage: 600V
• Collector-Base Voltage: 600V
• Emitter-Base Voltage: 6V
• Maximum Collector Current: 20A
• Maximum Collector Power Loss: 0.7W
• Maximum Switching Frequency: 100kHz
• Operating Temperature Range: -40°C to
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