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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
Specifications
Brand Name :
Toshiba
Model Number :
MG200Q1US51
Certification :
ROHS,CE,UL,CCC,VDE
Place of Origin :
Japan
MOQ :
1pcs
Price :
Negotiable
Payment Terms :
Western Union, T/T, L/C,Paypal
Supply Ability :
1000pcs/Day
Delivery Time :
0-2 days
Packaging Details :
Original Packing With Good Protection Material
Application :
High Power Switching
Alternate Item Number :
MG2OOQ1US51
Condition :
New
Warranty :
One Year
Product Name :
Transistor Module
Description

Toshiba IGBT Power Module MG200Q1US51 Transistor Module

MG200Q1US51

Product Description

Manufactured by: Toshiba America, Inc.
Part number: MG200Q1US51

Part Category: Transistors
Description: 300A, 1200V, N-CHANNEL IGBT
Collector-Emitter Voltage: 1200V
Gate-Emitter Voltage: 20V
Collector Current (DC): 300A
Forward Current: (DC): 200A
Collector Power Dissipation: 1500W
Junction Temperature: 150C
Isolation Voltage (AC 1 min.): 2500V
Input Capacitance (VCE=10V, VGE=0,f=1MHz): 24nF
Switching Time: (Inductive Load VCC=600V, IC=200A, VGE=15V, RG=4.7Ω)
-Turn-on Time: 0.05s typ.
-Rise Time: 0.05s typ.
-Turn-on Time: 0.2s typ.
-Turn-off Delay Time: 0.5s typ.
-Fall Time: 0.1s typ. ; 0.3s max.
-Turn-off Time: 0.6s typ.
Forward Voltage(IF=200A, VGE=0): 2.4V typ. ;3.5V max
Reverse Recovery Time: 0.15s typ. ; 0.3s max.
(IF=200A, VGE=-10V, di/dt=700A/s)

Features

High input impedance
High Speed
Low saturation voltage
Enhancement-mode
Electrodes are isolated from case

F&A

Do you have any partner in this field?

Our company has good-relationship partners in automation control field. So we can alwasy get supporot for price and stock.

What is your forecast for this industry?

As more and more work done by machine,our field has lofty propect for many years.

What is your resources?

Our team and our channel both in purchasing and sales.
Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

Product tags

high power igbt module

,

power module igbt

,

igbt power module 100a 600v
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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

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Product Detail
Brand Name :
Toshiba
Model Number :
MG200Q1US51
Certification :
ROHS,CE,UL,CCC,VDE
Place of Origin :
Japan
MOQ :
1pcs
Price :
Negotiable
Contact Supplier
Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

Guangzhou Sande Electric Co.,Ltd.

Site Member
8 Years
hebei, guangzhou
Since 2014
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Servo Motor Driver, Industrial Servo Motor, PLC Programmable Logic Controller
Total Annual :
1000000-1000000
Certification Level :
Site Member
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