Technology | | IPL | Diode Laser | LED |
Light source features | Light source | Xenon lamp | Diode laser bars | LED chips |
wavelength | Wide spectrum 610nm-900nm | Single wavelength 755/808nm/1064nm | Narrow spectrum 780-850nm | |
Light power | 5-10kw | 320-1000w | 840w | |
Light emitting area shape | Columnar | Line | Surface | |
Pulse lifespan | 10000-30000shots | 8-30million shots | 60-100 million shots | |
Operation | Operation mode | Stamp | Stamp/Repeat | Stamp/Repeat |
Energy density | 1-40j/cm2 | Stamp:50-100cm2 Repeat:5-12J/cm2@10Hz | Stamp:50-100cm2 Repeat:5-12J/cm2@10Hz | |
Maintenance | Handle | Always need change light tube | Laser generator is easily damaged, need replace every 1 to 2 years | If normal use and regular maintenance, handle has the same lifespan as device |
Filter | No need | Need often change filter and deionizer, if not, laser generator is easily damaged | No need | |
Cooling water | Drinking water | Special deionized water or coolant | Drinking water |
Product Name | iMED_LED |
Light source | LED |
Light spectrum | NIR |
Light power | 800W |
Pulse width | 10-300ms |
Energy density | 1-100J/cm2 |
Frequency | 1-10Hz |
Skin type | I-VI |
Operation mode | Stamp, Repeat |
Spot size | 15*15mm2 |
Cooling system | TEC Sapphire contact cooling/ Water cooling |
Cooling temperature | 15℃ - 10℃ |
Size | 50*46*35cm |
Net weight | 25KG |
| Diode laser | LED | LED Advantages |
Thermal damage | Light power | Similar | |
Thermal power | Similar | ||
Chip size | 1*10mm | 7.5*7.5mm | |
Conclusion | Similar total thermal power, LED has bigger heat dissipation are and smaller heat flow density. | ||
Heat transfer patch | Pass to the bottom and rear Average path is 1.5mm | Pass to the bottom Average path is just 0.2mm | |
Conclusion | LED has very short heat transfer path, lower thermal resistance and much higher efficiency of heat dissipation. | ||
Mechanical damage | Stress | Rectangle, high length-width ratio. Under stress of thermal deformation and thermal fatigue, chips easily desoldering or broken in pulsed working | Square, 1:1 length-width ratio. Extra thin chip and large soldering area firmly but low stress. |
Conclusion | Because of chip structure, LED chip’s stress is smaller than diode laser | ||
Optical damage | Light power | Similar | |
Light emitting area | Size 0.01*0.1mm High brightness, foreign body pollution can cause light-emitting surface burned | Size 5*5mm Brightness is just similar to normal LED lamp of flashlight, slight dust will not being ignited to burn the lighting surface | |
| Conclusion | Because of surface emitting, the brightness of LED light emitting area is much smaller than diode laser. | |
Chain damage | | Not like diode laser, for LED chips, single area’s failure does not affect other emitting area |