60W High Gain Wide Bandwidth Capability Frequency up to 4000MHz SZHUASHI YP10401560T for High Frequency Applications
Description
Innotion’s YP10401560T is a 60-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange
package.
Features
High Efficiency and Linear Gain Operation,Negative Gate Voltage and Bias Sequencing Required Excellent Thermal Stability and Excellent Ruggedness,Metal Based Package Sealed with Ceramic-Epoxy Lid.Gold Metallization System: Chip-Wire Bond-Package.
Pout | 60W |
Working Voltage | 28V |
Frequency | 4000MHz |
Always final Inspection before shipment;
1 year warranty for our products.