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Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage
Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage
Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage
Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage
Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage
Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage
Specifications
Brand Name :
Original brand
Model Number :
BSZ037N06LS5ATMA1
Certification :
Original
Place of Origin :
Original
MOQ :
5000pcs
Price :
Negotiation
Payment Terms :
T/T
Supply Ability :
100000pcs
Delivery Time :
2-3days
Packaging Details :
5000pcs
Continuous Leakage Current :
65 A
Installation :
Through Hole
Package :
TO-247-3
Transistor Polarity :
N-Channel
Channel Pattern :
Enhancement
Pd-Power Dissipation :
446 W
Vds-Leakage source breakdown electric shock :
650 V
Description

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel

Features

•OptimizedforhighperformanceSMPS,e.g.syncrec.

•100%avalanchetested •Superiorthermalresistance

•N-channel

•Pb-freeleadplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21

Product validation

Fully qualified according to JEDEC for Industrial Application

Categories

Mosfet Power Transistor

BSZ037N06LS5ATMA1
Package TSDSON-8 FL
Serise OptiMOS
Leakage Source on-resistance 3.7 mOhms
Continuous Leakage Current 40A
Pd-Power Dissipation 69 W
Vgs th-Gate Source threshold Voltage 1.1V
Channel Pattern Enhancement



FAQ:

Q. What is your lead time?

A: Most of the products are in-stock so we can send out within 3 days after payment is confirmed. Some special products may need longer time, but please do not worry about that, we will let you know before your order.

Q. What is your warranty?

A: 1200 days after goods have been received. Our products will be 100% tested before they are sent out.

Q. What's the MOQ for your products?

A: We accept small orders from our customers, but it depends on different items so please contact with us.



Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage



Product tags

mosfet current limiter circuit

,

mosfet enhancement

,

p enhancement mosfet model
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Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

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Product Detail
Brand Name :
Original brand
Model Number :
BSZ037N06LS5ATMA1
Certification :
Original
Place of Origin :
Original
MOQ :
5000pcs
Price :
Negotiation
Contact Supplier
Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage
Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage
Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

Shenzhen Weitaixu Capacitor Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2015
Business Type :
Distributor/Wholesaler, Agent, Exporter, Trading Company, Seller
Main Products :
SMD Ceramic Capacitor, Multilayer Ceramic Capacitor, Ceramic Chip Capacitor
Total Annual :
11 Million-20 Million
Employee Number :
50~100
Certification Level :
Active Member
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