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IRF3205PBF Si 55V 110A N Channel MOSFET Transistor
IRF3205PBF Si 55V 110A N Channel MOSFET Transistor
Specifications
Brand Name :
Infi neon
Model Number :
IRF3205PBF
Certification :
Original Part
Place of Origin :
Shenzhen, China
MOQ :
1PCS
Price :
to be Negotiated
Payment Terms :
T/T, Western Union, Paypal, Wechat Pay
Supply Ability :
1 Million pieces per Month
Delivery Time :
Immediate
Packaging Details :
TO-220AB
Packaging :
TO-220AB
Product Description :
Power Field-Effect Transistors
Product Type :
MOSFET N-CH 55V 110A TO-220AB
Operating Temp Range :
-55C to 175C
Description

IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube



Basic Parameters :

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Lead-Free.



Absolute Maximum Ratings :

IRF3205PBF Si 55V 110A N Channel MOSFET Transistor


Description :

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


Technical Specifications :

Tab Tab
Package Width 4.83(Max)
Package Height 9.02(Max)
Package Length 10.67(Max)
PCB changed 3
Lead Shape Through Hole
Mounting Through Hole
Product Category Power MOSFET
Material Si
Configuration Single
Process Technology HEXFET
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 55
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 110
Maximum Drain Source Resistance (mOhm) 8@10V
Typical Gate Charge @ Vgs (nC) 146(Max)@10V
Typical Gate Charge @ 10V (nC) 146(Max)
Typical Input Capacitance @ Vds (pF) 3247@25V
Maximum Power Dissipation (mW) 200000
Typical Fall Time (ns) 65
Typical Rise Time (ns) 101
Typical Turn-Off Delay Time (ns) 50
Typical Turn-On Delay Time (ns) 14
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Packaging Tube
Automotive No
Supplier Package TO-220AB
Standard Package Name TO-220
Pin Count 3
Military No





for product datasheet, CONTACT US directly.

Product tags

mosfet irf3205

,

irf520 mosfet

,

irfz44n mosfet
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IRF3205PBF Si 55V 110A N Channel MOSFET Transistor

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Product Detail
Brand Name :
Infi neon
Model Number :
IRF3205PBF
Certification :
Original Part
Place of Origin :
Shenzhen, China
MOQ :
1PCS
Price :
to be Negotiated
Contact Supplier
IRF3205PBF Si 55V 110A N Channel MOSFET Transistor

Shenzhen Weitaixu Capacitor Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2015
Business Type :
Distributor/Wholesaler, Agent, Exporter, Trading Company, Seller
Main Products :
SMD Ceramic Capacitor, Multilayer Ceramic Capacitor, Ceramic Chip Capacitor
Total Annual :
11 Million-20 Million
Employee Number :
50~100
Certification Level :
Active Member
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