STI20N60M2-EP Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) I2PAK Tube
Basic Parameters :
Absolute Maximum Ratings :
Description :
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
Technical Specifications :
Tab | Tab |
Package Width | 4.83(Max) |
Package Height | 9.02(Max) |
Package Length | 10.67(Max) |
PCB changed | 3 |
Lead Shape | Through Hole |
Mounting | Through Hole |
Product Category | Power MOSFET |
Material | Si |
Configuration | Single |
Process Technology | HEXFET |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 55 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 110 |
Maximum Drain Source Resistance (mOhm) | 8@10V |
Typical Gate Charge @ Vgs (nC) | 146(Max)@10V |
Typical Gate Charge @ 10V (nC) | 146(Max) |
Typical Input Capacitance @ Vds (pF) | 3247@25V |
Maximum Power Dissipation (mW) | 200000 |
Typical Fall Time (ns) | 65 |
Typical Rise Time (ns) | 101 |
Typical Turn-Off Delay Time (ns) | 50 |
Typical Turn-On Delay Time (ns) | 14 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tube |
Automotive | No |
Supplier Package | TO-220AB |
Standard Package Name | TO-220 |
Pin Count | 3 |
Military | No |
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