STP100N8F6 MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package
General Description :
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Distinctive Characteristics :
Part No: STP100N8F6
Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube
Product Category | Power MOSFET |
Process Technology | STripFET F6 |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 80 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Continuous Drain Current (A) | 100 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 9@10V |
Typical Gate Charge @ Vgs (nC) | 100@10V |
Typical Gate Charge @ 10V (nC) | 100 |
Typical Input Capacitance @ Vds (pF) | 5955@25V |
Maximum Power Dissipation (mW) | 176000 |
Typical Fall Time (ns) | 21 |
Typical Rise Time (ns) | 46 |
Typical Turn-Off Delay Time (ns) | 103 |
Typical Turn-On Delay Time (ns) | 33 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tube |
Automotive | No |
Pin Count | 3 |
Supplier Package | TO-220AB |
Standard Package Name | TO-220 |
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