STGD5H60DF Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
Basic Information :
Part No: STGD5H60DF
Description: Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
Lead Shape | Gull-wing |
Package Length | 6.6(Max) |
Package Width | 6.2(Max) |
Tab | Tab |
PCB changed | 2 |
Package Height | 2.4(Max) |
Mounting | Surface Mount |
Technology | Field Stop|Trench |
Channel Type | N |
Configuration | Single |
Maximum Gate Emitter Voltage (V) | ±20 |
Maximum Collector-Emitter Voltage (V) | 600 |
Typical Collector Emitter Saturation Voltage (V) | 1.5 |
Maximum Continuous Collector Current (A) | 10 |
Maximum Gate Emitter Leakage Current (uA) | 0.25 |
Maximum Power Dissipation (mW) | 83000 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tape and Reel |
Automotive | No |
Pin Count | 3 |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Military | No |
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