DS1230Y-150+ 256kb (32 k x 8) 150 ns Commercial Temp Non-Volatile SRAM - DIP-28

Description :

The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits.

Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an

out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and

write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in

place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices

also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices

in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the

number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Features :

ƒ10 years minimum data retention in the absence of external power ƒData is automatically protected during power loss ƒ

Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory ƒUnlimited write cycles ƒLow-power CMOS ƒRead and

write access times as fast as 70 ns ƒLithium energy source is electrically disconnected to retain freshness until power

is applied for the first time ƒFull ±10% VCC operating range (DS1230Y) ƒOptional ±5% VCC operating range (DS1230AB) ƒ

Optional industrial temperature range of -40°C to +85°C, designated IND ƒJEDEC standard 28-pin DIP package ƒPowerCap

Module (PCM) package -Directly surface-mountable module -Replaceable snap-on PowerCap provides lithium backup

battery -Standardized pinout for all nonvolatile SRAM products -Detachment feature on PowerCap allows easy removal

using a regular screwdriver.

Attributes Table :

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