Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247
Feature
• Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions
• Extremely high dv/dt
• Optimized body diode recovery phase
• Optimized softness
APPLICATIONS
• Charging stations for electric vehicles
• LED lighting
• Telecom
• Servers
• Solar inverters
BENEFITS
• Extremely high effi ciency performance and increased power density
• More robust power conversion in ZVS, full and half bridge topologies
• Higher operation frequencies and better thermal management
• Reduced EMI
Categories | MOSFET T8 40V LOW COSS |
---|---|
STWA65N60DM6 | |
Transistor Polarity | N-Channel |
Channel No. | 1 Channel |
Leakage Source on-resistance | 71 mOhms |
Qg-Gate Charge | 61 nC |
Configure | Single |
Continuous Leakage Current | 38A |
Vds-Leakage Source Breakdown Voltage | 600V |
FAQ:
Q1. How about the quality?
A: We test 100% before we ship out and we can offer 120days quality assurance.
Q2. What is your terms of payment?
A: Order below 10000USD is T/T 100% in advance .
B: Order over 10000USD T/T 50% as deposit to arrange goods.and rest 50% before delivery.
C: Sample order we can support
D: We support PAYPAL, UnionPay and Alipay.
Q3. What is your terms of delivery?
A: EXW, FOB, CFR, CIF.(defaults EXW for all quotation)