Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A
Feature
• Reduced switching losses
• Lower RDS(on) per area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
• High creepage package
• Excellent switching performance thanks to the extra driving source pin
Applications
• Switching applications
• LLC converters
• Boost PFC converters
Categories | Mosfet Power Transistor |
---|---|
STO33N60M6 | |
Package | TO-LL-8 |
Channel Pattern | Enhancement |
Leakage Source on-resistance | 125 mOhms |
Qg-Gate Charge | 33.4 nC |
Configure | Single |
Continuous Leakage Current | 25A |
Vds-Leakage Source Breakdown Voltage | 600V |
FAQ:
Q1. Can we return back the goods?
A: Sure, if you are not satisfied with the quality, you can send the original box back to exchange or refund.You pay the return ship cost.We pay the back cost.
B: If you get wrong item and the mistake made by yourself;we can offer return too.But you should pay the ship cost both.And you can ask us to exchange or refund.
Q5. What is your sample policy?
A: Most of products, we can offer free samples;you just need pay the shipping cost.
Q6: Can we ask support if get trouble?
Sure, if there is any quality problems or questions;we could offer technical support or return service .