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High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application
High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application
High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application
High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application
Specifications
MOQ :
1500
Payment Terms :
T/T
Supply Ability :
3000000PCS/month
Delivery Time :
5-15days
Packaging Details :
Tube
Brand Name :
OTOMO
Model Number: :
HBR20200
Place of Origin: :
China
Package :
TO-220C TO-220HF TO-263
IF(AV) :
20A
VRRM :
200V
Tj :
175℃
VF(max) :
0.75V
Description

Suitable for high frequency switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263

APPLICATIONS

 High frequency switch power supply  Free wheeling diodes, polarity protection applications

FEATURES

Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection,High reliability RoHS product

Product tags

mos field effect transistor

,

igbt overvoltage protection

,

modified sine wave inverter damage
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High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

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Product Detail
MOQ :
1500
Payment Terms :
T/T
Supply Ability :
3000000PCS/month
Delivery Time :
5-15days
Packaging Details :
Tube
Brand Name :
OTOMO
Contact Supplier
High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application
High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
4 Years
shenzhen
Since 2009
Business Type :
Manufacturer
Main Products :
STM32 IC, Voltage Stabilizer IC, MCU Microcontroller Unit
Employee Number :
80~120
Certification Level :
Verified Supplier
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