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600mA Silicon Power Transistor NPN Power Transistor High Current
600mA Silicon Power Transistor NPN Power Transistor High Current
Specifications
Place of Origin :
ShenZhen China
Brand Name :
OTOMO
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
A42
Collector-Base Voltage :
310V
Emitter-Base Voltage :
5V
Tstg :
-55～+150℃
Material :
Silicon
Collector Current :
600 mA
Description

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)

FEATURE

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

Marking :D965A

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 310 V
VCEO Collector-Emitter Voltage 305 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 200 mA
ICM Collector Current -Pulsed 500 mA
PC Collector Power Dissipation 500 mW
RθJA Thermal Resistance from Junction to Ambient 250 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 310 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 305 V
Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V

Collector cut-off current

 ICBO VCB=200V,IE=0 0.25 µA

ICEX

 VCE=100V,VX=5V 5 µA
VCE=300V,VX=5V 10 µA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA

DC current gain

 hFE(1) VCE=10V, IC=1mA 60
hFE(2) VCE=10V, IC=10mA 100 300
hFE(3) VCE=10V, IC=30mA 75
Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V
Transition frequency fT VCE=20V,IC=10mA, f=30MHz 50 MHz


Typical Characteristics

600mA Silicon Power Transistor NPN Power Transistor High Current

600mA Silicon Power Transistor NPN Power Transistor High Current

600mA Silicon Power Transistor NPN Power Transistor High Current

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047



600mA Silicon Power Transistor NPN Power Transistor High Current

SOT-89-3L Suggested Pad Layout

600mA Silicon Power Transistor NPN Power Transistor High Current


SOT-89-3L Tape and Reel
600mA Silicon Power Transistor NPN Power Transistor High Current
600mA Silicon Power Transistor NPN Power Transistor High Current
600mA Silicon Power Transistor NPN Power Transistor High Current


Product tags

mosfet high power

,

high power mosfet

,

smd power mosfet
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600mA Silicon Power Transistor NPN Power Transistor High Current

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
OTOMO
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
600mA Silicon Power Transistor NPN Power Transistor High Current

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
4 Years
shenzhen
Since 2009
Business Type :
Manufacturer
Main Products :
STM32 IC, Voltage Stabilizer IC, MCU Microcontroller Unit
Employee Number :
80~120
Certification Level :
Verified Supplier
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