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RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
Specifications
Place of Origin :
ShenZhen China
Brand Name :
OTOMO
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
8205A
Product name :
Mosfet Power Transistor
VDSS :
6.0 A
APPLICATION :
Power Management
FEATURE :
Low Gate Charge
Power mosfet transistor :
SOT-23-6L Plastic-Encapsulate
Description

8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET

General Description

VDSS= V ID= 6.0 A

z 20

G1

6

D1,D2

5

G2

4
z

RDS(on) < Ω@V = 4.5V

25m

GS
z

RDS(on) < Ω@V = 2.5V

32m

GS

1 2 3

S1

D1,D2 S2

FEATURE

z TrenchFET Power MOSFET

z Excellent RDS(on)

z Low Gate Charge

z High Power and Current Handing Capability

z Surface Mount Package

APPLICATION

z Battery Protection

z Load Switch

z Power Management

Parameter Symbol Test Condition Min Typ Max Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V
Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA
Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 0.9V
Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S
Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V

DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance Ciss 800 pF
Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF
Reverse Transfer Capacitance Crss 125 pF

SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time td(on) 18 ns
Turn-on rise time tr VDD=10V,VGS=4V, 5 ns
Turn-off delay time td(off) ID=1A,RGEN=10Ω 43 ns
Turn-off fall time tf 20 ns
Total Gate Charge Qg 11 nC
Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC
Gate-Drain Charge Qgd 2.5 nC

Notes :

1. Repetitive rating:Pluse width limited by maximum junction temperature

2. Surface Mounted on FR4 board,t≤10 sec.

3. Pulse test : Pulse width≤300μs, duty cycle≤2%.

4. Guaranteed by design, not subject to production.

RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSSRoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

SOT-23-6L Package Outline Dimensions

RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

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RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
OTOMO
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
4 Years
shenzhen
Since 2009
Business Type :
Manufacturer
Main Products :
STM32 IC, Voltage Stabilizer IC, MCU Microcontroller Unit
Employee Number :
80~120
Certification Level :
Verified Supplier
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