Surface Mount Small Signal Fast Schottky Diodes BAS85 30V 200mA
Features
· For general purpose applications
· These diodes features very low turn-on voltage and fast switching.
· These devices are protected by a PN junction guard ring against excessive voltage, such as
electrostatic discharges.
· This diode is also available in a DO-35 case with type designation BAT85.
· Component in accordance to RoHS 2015/863/EU
Applications:
ABSOLUTE RATINGES AND ELECTRICAL CHARACTER
Tj=25℃
PARAMETER | SYMBOLS | VALUE | MIN | TYP | MAX | UNIT |
Repetitive peak reverse voltage | VR | 30 | Volts | |||
Forward continuous current at TA=25°C | IF | 2001) | mA | |||
Repetitive peak forward current at TP<1s, δTA=25°C | IFM | 3001) | mA | |||
Surge forward current at TP<10ms, TA=25°C | IFSM | 6001) | mA | |||
Power dissipation at TA=65°C | Ptot | 2001) | mW | |||
Junction temperature | TJ | 125 | °C | |||
Ambient operating temperature range | TA | -55 to +125 | °C | |||
Storage temperature range | TSTG | -55 to +150 | °C | |||
Reverse breakdown voltage tested with 100µA pulses | V(BR)R | 30 | Volts | |||
Forward voltage Pulse test TP at IF=0.1mA, at IF=1mA, at IF=10mA, at IF=30mA, at IF=100mA, |
VF
|
0.50 |
0.24 0.32 0.4
0.8 |
Volts | ||
Leakage current VR=25V | IR | 2 | µA | |||
Junction capacitance at VR=1V, f=1MHz | CJ | 10 | pF | |||
Reverse recovery time form IF=10mA, IR=1mA | TRR | 5 | ns | |||
Thermal resistance junction to ambient air | RJA | 3002) | K/W |
NOTES:
Note: (1) Valid provided that electrodes are kept at ambient temperature.
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