SD101 Series Small Signal Schottky Diode DO-35 Case Semiconductor Diodes Division
Features
- Metal-on-silicon junction ,majority carrier conduction
- High current capability ,low forward voltage drop
- Extremely low reverse current IR
- Ultra speed switching characteristics
- Small temperature coefficient of forward characteristics
- Satisfactory wave detection efficiency
- Super high speed switching cirits, small current rectifier
- High temperature soldering guaranteed:260℃/10 seconds at terminals
- Component in accordance to RoHS 2015/863/EU
Applications
1. HF-detector
2. Protection circuit
3. Small battery charger
4. AC/DC, DC/DC converters
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter | Test Conditions | Type | Symbol | Value | Unit |
peak inverse voltage | | SD101A | VRRM | 60 | V |
SD101B | VRRM | 50 | V |
SD101C | VRRM | 40 | V |
Maximum single cycle surge 10us square wave | | | IFSM | 2 | A |
Power dissipation | Tamb=25℃ | | PV | 400 | mW |
Storage temperature range | | | Tstg | -55~+150 | ℃ |
Electrical Characteristics
Tj=25℃
Parameter | Test Conditions | Type | Symbol | Min | Typ | Max | Unit | Forward voltage drop | IF=1mA | SD101A | VF | | | 0.41 | V | SD101B | | | 0.4 | SD101C | | | 0.39 | IF=15mA | SD101A | VF | | | 1 | V | SD101B | | | 0.95 | SD101C | | | 0.9 | leakage current | VR=50V | SD101A | IR | | 1 | 0.2 | μA | VR=40V | SD101B | | | 0.2 | VR=30V | SD101C | | | 0.2 | Junction capacitance | VR=VF=0, f=1MHz | SD101A | Ctot | | | 2.0 | pF | SD101B | | | 2.1 | SD101C | | | 2.2 | Reverse recovery time | IF=IR=200mA to 0.1mA | | trr | | | 1 | ns | |

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Shipping
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