DO-35 Glass Package Low VF Small Signal Schottky Diode 1N60 1N60P for Detection
Features
1. High reliability
2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter | Test Conditions | Type | Symbol | Value | Unit |
Repetitive peak reverse voltage | 1N60 | VRRM | 40 | V | |
1N60P | VRRM | 45 | V | ||
Peak forward surge current | tp≦1 s | 1N60 | IFSM | 150 | mA |
1N60P | IFSM | 500 | mA | ||
Forward continuous current | Ta=25℃ | 1N60 | IF | 30 | mA |
1N60P | IF | 50 | mA | ||
Storage temperature range | Tstg | -65~+125 | ℃ |
Maximum Thermal Resistance
Parameter | Test Conditions | Symbol | Value | Unit |
Junction ambient | on PC board 50mm×50mm×1.6mm | RthJA | 250 | K/W |
Electrical Characteristics
Parameter | Test Conditions | Type | Symbol | Min | Typ | Max | Unit |
Forward voltage | IF=1mA | 1N60 | VF | 0.32 | 0.5 | V | |
1N60P | VF | 0.24 | 0.5 | V | |||
IF=30mA | 1N60 | VF | 0.65 | 1.0 | V | ||
IF=200mA | 1N60P | VF | 0.65 | 1.0 | V | ||
Reverse current | VR=15V | 1N60 | IR | 1 | 5 | μA | |
1N60P | IR | 5 | 10 | μA | |||
Junction capacitance | VR=1V, f=1MHz | 1N60 | CJ | 2.0 | pF | ||
VR=10V, f=1MHz | 1N60P | CJ | 6.0 | pF | |||
Reverse recovery time | IF=IR=1mA Irr=1mA RC=100? | trr | 1.0 | ns |
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