SD103A SD103B SD103C Small Signal Schottky Diode With DO-35 Package
Features
1. The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN
junction guardring.
2. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,
steering, blasing and coupling diodes for fast switching and low logic level applications.
3. Other applicatuibs are click suppression, effcient full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage battery systems.
4. For general purpose applications.
5. High reliability
Applications
1. HF-detector
2. Protection circuit
3. Small battery charger
4. AC/DC, DC/DC converters
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter | Test Conditions | Type | Symbol | Value | Unit |
Repetitive peak reverse voltage | SD103A | VRRM | 40 | V | |
SD103B | VRRM | 30 | V | ||
SD103C | VRRM | 20 | V | ||
Peak forward surge current | Tp≤1s | IFRM | 1 | A | |
Forward current | IFM | 350 | mA | ||
Power dissipation | Tamb=25℃ | PV | 400 | mW | |
Storage temperature range | Tstg | -65~+175 | ℃ |
Electrical Characteristics
Tj=25℃
Parameter | Test Conditions | Type | Symbol | Min | Typ | Max | Unit |
Forward voltage | IF=20mA | VF | 0.37 | V | |||
IF=200mA | VF | 0.6 | V | ||||
Reverse current | VR=30V | SD103A | IR | 1 | 5 | μA | |
VR=20V | SD103B | IR | 5 | μA | |||
VR=10V | SD103C | IR | 5 | μA | |||
Diode capacitance | VR=VF=0, f=1MHz | CD | 50 | pF | |||
Reverse recovery time | IF=IR=200mA to 0.1mA | trr | 10 | ns |
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