Electronic Components Small Signal Schottky 40V 350MA DO35 BAT48
Features
· For general purpose applications
· These diodes features very low turn-on voltage and fast switching.
· These devices are protected by a PN junction guard ring against excessive voltage, such as
electrostatic discharges.
· Small glass structure ensures high reliability
· Low breakover current
· High temperature soldering guaranteed: 260℃/10 seconds at terminals
· Component in accordance to RoHS 2015/863/EU
Applications:
Absolute Maximum Ratings
Tj=25℃
Parameter | Symbol | Value | Unit |
Repetitive peak reverse voltage | VRRM | 40 | V |
Forward Continuous Current at Tamb = 25 °C | IF | 3501) | mA |
Repetitive Peak Forward Current at tp < 1 s, d < 0.5, Tamb = 25 °C | IFRM | 11) | A |
Surge Forward Current at tp < 10 ms, Tamb = 25 °C | IFSM | 7.51) | A |
Tamb = 25 °C IFSM 7.51) A Power Dissipation1) at Tamb = 65 °C | Ptot | 3301) | mW |
Junction temperature | Tj | 125 | ℃ |
Ambient Operating Temperature Range | Tamb | -65~+125 | ℃ |
Storage temperature range | Tstg | -65~+150 | ℃ |
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Symbol | Min | Typ | Max | Unit | |
Reverse Breakdown Voltage tested with 100 mA Pulses | V(BR)R | 40 | V | ||
Forward Voltage Pulse Test tp < 300 ms, d < 2% at IF = 0.1 mA at IF = 10 mA at IF = 250 mA |
VF VF VF |
0.25 0.40 0.90 |
V V V | ||
Leakage Current Pulse Test tp < 300 ms, d < 2% at VR = 10 V at VR = 10 V, Tj = 60 °C at VR = 20 V at VR = 20 V, Tj = 60 °C at VR = 40 V at VR = 40 V, Tj = 60 °C |
IR IR IR IR IR IR |
|
2 15 5 25 25 50 |
mA mA mA mA mA mA | |
Capacitance at VR = 1 V, f = 1 MHz | Ctot | 12 | pF | ||
Thermal Resistance Junction to Ambient Air | RthJA | 0.31) | K/mW |
1) Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature (DO-35)
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