1SS133 1SS244 High Speed Switching DiodeLow Reverse Current DO-34
Features
1. Glass sealed envelope.
2. High reliability.
3. High speed.
Applications
High speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter | Symbol | Limit | Unit |
DC Reverse Voltage | VR | 80 | V |
Peak Reverse Voltage*1 | VRM | 90 | V |
Mean rectifying current | Io | 130 | mA |
Peak forward current | IFM | 400 | mA |
Surge current(1s) | Isurge | 600 | mA |
Power Dissipation | P | 300 | mW |
Junction Temperature | Tj | 175 | °C |
Storage Temperature | TS | –65 to +175 | °C |
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress
ratings only. Functional operation above the recommended operating conditions is not implied.
Extended exposure to stresses above the recommended operating conditions may affect device
reliability.
Electrical Characteristics
Tj=25℃
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
Forward Voltage | VF | IF = 100mA | — | 0.92 | 1.0 | V |
Reverse Current | IR | VR = 80V | — | 0.02 | 0.5 | μA |
Capacitance between terminals | CT | VR = 0.5V, f =1.0 MHz | — | 1.55 | 2 | pF |
Reverse Recovery Time | trr | VR = 0.5V , IF = 10mA, RL = 50Ω | — | 1.5 | 4 | ns |
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