SMD High Efficiency Rectifier Diode HS3M Used Integrated Circuits
FEATURES
Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic placement
Fast switching for high efficiency
High temperature soldering: 260℃/10 seconds at terminals
Plastic material used carries Underwriters Laboratory Classification 94V-O
MECHANICAL DATA
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER | HS3A | HS3B | HS3D | HS3F | HS3G | HS3J | HS3K | HS3M | Unit |
Maximum Recurrent Peak Reverse Voltage | 50 | 100 | 200 | 300 | 400 | 600 | 800 | 1000 | V |
Maximum RMS Voltage | 35 | 70 | 140 | 210 | 280 | 420 | 580 | 700 | V |
Maximum DC Blocking Voltage | 50 | 100 | 200 | 300 | 400 | 600 | 800 | 1000 | V |
Maximum Average Forward Rectified Current .375"(9.5mm) Lead Length at Ta=55℃ | 3.0 | A | |||||||
Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) | 150 | A | |||||||
Maximum Instantaneous Forward Voltage at 3.0A | 1.0 | 1.3 | 1.7 | V | |||||
Maximum DC Reverse Current Ta=25℃ at Rated DC Blocking Voltage Ta=100℃ | 10.0
200 | μA
μA | |||||||
Maximum Reverse Recovery Time (Note 1) | 50 | 75 | nS | ||||||
Typical Junction Capacitance (Note 2) | 80 | 50 | pF | ||||||
Operating Temperature Range TJ | -55 +150 | ℃ | |||||||
Storage Temperature Range TSTG | -55 +150 | ℃ |
NOTES:
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Mounted on P.C.B. with 0.6”x0.6” ( 16 x 16 mm ) Copper Pad Areas.
Drawing:
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4. Quality Warranty 90 Days(Any used items can not be refunded or replaced).
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