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H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor
H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor
H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor
H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor
Specifications
Brand Name :
Infineon Technoctifier Ilogies/International ReOR
Model Number :
IHW30N160R2FKSA1
MOQ :
1 piece
Payment Terms :
T/T
Delivery Time :
2~8 workdays
Brand :
Infineon Technologies/International Rectifier IOR
Certificate :
/
Model :
IHW30N160R2FKSA1
MOQ :
1 pc
Price :
Negotiated
Delivery :
2~8 workdays
Payment :
T/T
Description

Product Description

IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series

Applications:
• Inductive Cooking
• Soft Switching Applications

Description:

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1
for target applications
• Pb-free lead plating; RoHS compliant

Specification:IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1

Part numberIHW30N160R2
Category
Discrete Semiconductor Products
　
Transistors - IGBTs - Single
Series
TrenchStop®
Package
Tube
IGBT Type
NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1600 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
90 A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 30A
Power - Max
312 W
Switching Energy
4.37mJ
Input Type
Standard
Gate Charge
94 nC
Td (on/off) @ 25°C
-/525ns
Test Condition
600V, 30A, 10Ohm, 15V
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-1


Product tags

5401dm transistor

,

transistor igbt

,

power transistor datasheet
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H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor

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Product Detail
Brand Name :
Infineon Technoctifier Ilogies/International ReOR
Model Number :
IHW30N160R2FKSA1
MOQ :
1 piece
Payment Terms :
T/T
Delivery Time :
2~8 workdays
Brand :
Infineon Technologies/International Rectifier IOR
Contact Supplier
H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor
H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor

Guangzhou Topfast Technology Co., Ltd.

Active Member
3 Years
guangdong, guangzhou
Since 2018
Business Type :
Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company, Seller
Main Products :
Electronic IC Chip, Memory IC Chip, Amplifier IC Chip
Employee Number :
80~100
Certification Level :
Active Member
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