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ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB
ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB
Specifications
Brand Name :
original
Model Number :
MRF9045LR1
Certification :
ISO9001:2015standard
Place of Origin :
original
MOQ :
10pcs
Price :
9.43-9.88SD/PCS
Payment Terms :
L/C, Western Union,palpay
Supply Ability :
1000pcs/months
Delivery Time :
2-3 workdays
Packaging Details :
standard
product name :
MRF9045LR1
Product Category :
RF Bipolar Transistors
Technology :
Si
Product Type :
RF Bipolar Transistors
Gain :
18.8dB
Mounting Style :
SMD/SMT
Description

MRF9045LR1Transistors RF Bipolar Transistors Si original in stock

The ASI MRF9045LR1 is a high voltage, gold-metalized,

laterally diffused metal oxide semiconductor. Ideal for today's

RF power amplifier Applications.

ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

RF MOSFET Transistors
RoHS: Details
N-Channel
Si
4.25 A
65 V
945 MHz
18.8 dB
60 W
SMD/SMT
NI-360
Tray
Configuration: Single
Forward Transconductance - Min: 3 S
Pd - Power Dissipation: 117 W
Product Type: RF MOSFET Transistors
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: 15 V
Vgs th - Gate-Source Threshold Voltage: 4.8 V
Unit Weight: 0.032480 oz
Typical Two•
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
MRF9045LR1 MRF9045LSR1
5
−
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
−
Channel Enhancement
−
Mode Lateral MOSFETs
Designed
for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high ga
in and broadband performance of these
devices make them ideal for large
−
signal, common
−
source amplifier applica-
tions in 28 volt base station equipment.
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
No
Product tags

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rf transistor list

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bd249c transistor
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ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

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Product Detail
Brand Name :
original
Model Number :
MRF9045LR1
Certification :
ISO9001:2015standard
Place of Origin :
original
MOQ :
10pcs
Price :
9.43-9.88SD/PCS
Contact Supplier
ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

Walton Electronics Co., Ltd.

Active Member
4 Years
shenzhen
Since 2004
Business Type :
Trading Company
Main Products :
Integrated Circuit Chip, Transistor IC Chip, Temperature Sensor Chip
Employee Number :
50~100
Certification Level :
Active Member
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