FCB36N60NTM MOSFET Transistors Discrete Semiconductors original
Product Attribute | Attribute Value |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package/Case: | SC-70-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Id - Continuous Drain Current: | 36 A |
Rds On - Drain-Source Resistance: | 90 mOhms |
Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 112 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 312 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Configuration: | Single |
Fall Time: | 4 ns |
Forward Transconductance - Min: | 41 S |
Height: | 4.83 mm |
Length: | 10.67 mm |
Product Type: | MOSFET |
Rise Time: | 22 ns |
Series: | FCB36N60N |
Factory Pack Quantity: | 800 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 94 ns |
Typical Turn-On Delay Time: | 23 ns |
Width: | 9.65 mm |
Unit Weight: | 4 g |