Specifications
Brand Name :
original
Model Number :
TK30E06N1,S1X
Certification :
ISO9001:2015standard
Place of Origin :
original
MOQ :
10pcs
Price :
pls contact us
Payment Terms :
L/C, Western Union,palpay
Supply Ability :
1000pcs/months
Delivery Time :
2-3 workdays
Packaging Details :
standard
product name :
TK30E06N1 S1X
Product Category :
MOSFET
Mounting Style :
Through Hole
Package / Case :
TO-220-3
Transistor Polarity :
N-Channel
Height :
15.1 mm
Description

TK30E06N1,S1X Discrete Semiconductors Transistors MOSFET Through Hole

. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

TK30E06N1 S1X Discrete Semiconductors Transistor IC Chip MOSFET Through Hole

MOSFET
RoHS: Details
Si
Through Hole
TO-220-3
N-Channel
1 Channel
60 V
43 A
15 mOhms
- 20 V, + 20 V
2 V
16 nC
- 55 C
+ 150 C
53 W
Enhancement
U-MOSVIII-H
Tube
Configuration: Single
Height: 15.1 mm
Length: 10.16 mm
Product Type: MOSFET
Series: TK30E06N1
Factory Pack Quantity: 50
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.45 mm
Unit Weight: 0.068784 oz

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TK30E06N1 S1X Discrete Semiconductors Transistor IC Chip MOSFET Through Hole

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Brand Name :
original
Model Number :
TK30E06N1,S1X
Certification :
ISO9001:2015standard
Place of Origin :
original
MOQ :
10pcs
Price :
pls contact us
Contact Supplier
TK30E06N1 S1X Discrete Semiconductors Transistor IC Chip MOSFET Through Hole

Walton Electronics Co., Ltd.

Active Member
4 Years
shenzhen
Since 2004
Business Type :
Trading Company
Employee Number :
50~100
Certification Level :
Active Member
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