TK30E06N1,S1X Discrete Semiconductors Transistors MOSFET Through Hole
. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
MOSFET | |
RoHS: | Details |
Si | |
Through Hole | |
TO-220-3 | |
N-Channel | |
1 Channel | |
60 V | |
43 A | |
15 mOhms | |
- 20 V, + 20 V | |
2 V | |
16 nC | |
- 55 C | |
+ 150 C | |
53 W | |
Enhancement | |
U-MOSVIII-H | |
Tube | |
Configuration: | Single |
Height: | 15.1 mm |
Length: | 10.16 mm |
Product Type: | MOSFET |
Series: | TK30E06N1 |
Factory Pack Quantity: | 50 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Width: | 4.45 mm |
Unit Weight: | 0.068784 oz |