S29GL01GS10TFI010 Semiconductor Memory IC NOR FLASH 1G 3V 100NS Parallel NOR Flash Integrated Circuits
Specifications:
Memory Size: | 1 Gbit |
Supply Voltage - Min: | 2.7 V |
Supply Voltage - Max: | 3.6 V |
Interface Type: | Parallel |
Organization: | 64 M x 16 |
Data Bus Width: | 16 bit |
Timing Type: | Asynchronous |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 85 C |
Packaging: | Tray |
Architecture: | Eclipse |
Memory Type: | NOR |
Moisture Sensitive: | Yes |
Speed: | 100 ns |
Factory Pack Quantity: | 910 |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 60 mA |
Distinctive Characteristics
CMOS 3.0 Volt Core with Versatile I/O
65 nm MirrorBit Eclipse Technology
Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
Versatile I/O Feature – Wide I/O voltage range (VIO): 1.65 V to VCC
×16 data bus
Asynchronous 32-byte Page read
512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
Single word and multiple program on same word options
Automatic Error Checking and Correction (ECC) – internal hardware ECC with single bit error correction
Sector Erase – Uniform 128-kbyte sectors
Suspend and Resume commands for Program and Erase operations.