MR0A08BCYS35 Magnetoresistive Random Access Memory (MRAM) EHHD024A0A41Z DE118-RS-20/6.35 Memory Data Storage
FEATURES BENEFITS
• One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more efficient design
• Improves reliability by replacing battery-backed SRAM
• 3.3 Volt power supply
• Fast 35 ns read/write cycle
• SRAM compatible timing
• Native non-volatility
• Unlimited read & write endurance
• Data always non-volatile for >20 years at temperature
• Commercial and industrial temperatures
• All products meet MSL-3 moisture sensitivity level
• RoHS-Compliant TSOP2 and BGA packages
BENEFITS
• One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more efficient design
• Improves reliability by replacing battery-backed SRAM
Product Category: | MRAM |
TSOP-44 | |
Parallel | |
1 Mbit | |
128 k x 8 | |
8 bit | |
35 ns | |
3 V | |
3.6 V | |
55 mA | |
- 40 C | |
+ 85 C | |
MR0A08B | |
Tray | |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Product Type: | MRAM |
135 | |
Subcategory: | Memory & Data Storage |
Unit Weight: | 0.178707 oz |