Silicon Standard Rectifier Diode 3A 600V 800V 1000V 1N5405 1N5406 1N5407 1N5408
Product Drawing
SYMBOLS | 1N 5400 | 1N 5401 | 1N 5402 | 1N 5403 | 1N 5404 | 1N 5405 | 1N 5406 | 1N 5407 | 1N 5408 | UNITS | |
---|---|---|---|---|---|---|---|---|---|---|---|
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 | VOLTS |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 210 | 280 | 350 | 420 | 560 | 700 | VOLTS |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 | VOLTS |
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃ | I(AV) | 3.0 | Amps | ||||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | IFSM | 150 | Amps | ||||||||
Maximum instantaneous forward voltage at 3.0A | VF | 1.0 | VOLTS | ||||||||
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=100℃ | IR | 5.0 100 | µA | ||||||||
Typical junction capacitance (NOTE 1) | CJ | 30.0 | pF | ||||||||
Typical thermal resistance (NOTE 2) | RθJA | 20.0 | ℃/W | ||||||||
Operating junction and storage temperature range | TJ,TSTG | -65 to +175 | ℃ |