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NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V
NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V
NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V
NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V
Specifications
Brand Name :
trusTec
Model Number :
DB3
Certification :
ROHS
Place of Origin :
China
MOQ :
5K PCS
Price :
Negotiable (EXW/FOB/CNF)
Payment Terms :
T/T
Supply Ability :
800KK PCS per month
Delivery Time :
10 work days fresh products
Packaging Details :
5K PCS per tape & box, 100K PCS per carton.
VBO :
28-36V
VBO Typ :
32V
Package :
DO-35 glass
IBO :
100μA
Type :
DIAC
Package type :
Through Hole
Material :
Silicon
Power :
150mW
Description
Glass Passivated NPN Bidirectional Trigger Diode Thyristors DIAC DB3 Blue Body Coat
DB3
BIDIRECTIONAL TRIGGER DIODE
Breakover Voltage - 32 Volts Power- 150mW
NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V
Product Details
Small glass structure ensures high reliability
VBO:28-36V version
Low breakover current
High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-35 glass body / A-405 plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026
Mounting Position: Any
Weight: DO-35 0.005 ounce, 0.14gram
A-405 0.008 ounce, 0.23gram
MAXIMUM RATINGS AND CHARACTERISTICS
TEST CONDITION
SYMBOLS
VALUE
UNITS
Min. Typ. Max.
Breakover voltage
C=22nF
VBO
 28 32 36
VOLTS
Breakover voltage symmetry
C=22nF
I+VBOI-I-VBOI
-3
 3
VOLTS
Dynamic breakover voltage
(NOTE 1)
I D V ± I
 5
VOLTS
Output voltage
DIAGRAM2
VO
 5
VOLTS
Breakover current
C=22nF
IBO
 100
mA
Rise time
 DIAGRAM3
tr
 1.5
mS
Leakage current
VR=0.5VBO
IB
 10
mA
Power dissipation on printed circuit
TA=65 C
Pd
 150
mW
Repetitive peak on-state current
tp=20ms
f=100Hz
ITRM
 2 A
Thermal Resistances from Junction to ambient
RQJA
 400
℃/W
Thermal Resistances from Junction to lead
RQJL
 150 ℃/W
Operating junction and storage temperature range
TJ,TSTG
 125 ℃

Product Datasheet
Type Breakover Voltage Max. Breakover Voltage Symmetry Max. Peak Breakover Current Max. Dynamic Breakover Voltage Max. Peak On-state Current Package
V V μA V A
Min. Typ. Max.
DB3 28 32 36 3 100 5 2 DO-35
DB4 35 40 45 3 100 5 2 DO-35
DB6 56 63 70 3 100 5 2 DO-35
DB́8 72 80 88 3 100 5 2 DO-35

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

Product tags

in4007 rectifier diode

,

1n4001 rectifier diode

,

thyristor diode module
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NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

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Product Detail
Brand Name :
trusTec
Model Number :
DB3
Certification :
ROHS
Place of Origin :
China
MOQ :
5K PCS
Price :
Negotiable (EXW/FOB/CNF)
Contact Supplier
NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V
NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

Changzhou Trustec Company Limited

Active Member
5 Years
jiangsu, changzhou
Since 2011
Business Type :
Manufacturer, Exporter, Trading Company, Seller
Main Products :
SMD TVS Diode, SMD Rectifier Diode, SMD Fast Recovery Diode
Total Annual :
5,000,000-10,000,000
Employee Number :
50~300
Certification Level :
Active Member
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