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High Current Resistance Schottky Diode For High Frequency Switch Power Supply
High Current Resistance Schottky Diode For High Frequency Switch Power Supply
Specifications
Brand Name :
Uchi
Model Number :
MBR20100
Certification :
CE / RoHS / ISO9001 / UL
Place of Origin :
Dongguan China
MOQ :
Negotiation
Price :
Negotiation
Payment Terms :
T/T
Supply Ability :
2000000 per month
Delivery Time :
Negotiation
Packaging Details :
Export package / Negotiation
Type :
Schottky Diode
Features :
RoHS product
Package Type :
Through Hole
Max. Forward Current :
30A, 30A
Max. Forward Voltage :
0.9V, 0.9V
Max. Reverse Voltage :
200V
Description

High Current Resistance Schottky Diode For High Frequency Switch Power Supply​

MBR20100.pdf

The internal circuit structure of a typical Schottky rectifier is based on an N-type semiconductor substrate, on which an N-epitaxial layer with arsenic as a dopant is formed. The anode uses materials such as molybdenum or aluminum to make the barrier layer. Silicon dioxide (SiO2) is used to eliminate the electric field in the edge area and improve the withstand voltage value of the tube. The N-type substrate has a very small on-state resistance, and its doping concentration is 100% higher than that of the H-layer. An N+ cathode layer is formed under the substrate to reduce the contact resistance of the cathode. By adjusting the structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal, as shown in the figure. When a forward bias is applied to both ends of the Schottky barrier (the anode metal is connected to the positive pole of the power supply, and the N-type substrate is connected to the negative pole of the power supply), the Schottky barrier layer becomes narrower and its internal resistance becomes smaller; otherwise, if When a reverse bias is applied to both ends of the Schottky barrier, the Schottky barrier layer becomes wider and its internal resistance becomes larger.


Features

1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product

Applications

1. High frequency switch Power supply

2. Free wheeling diodes, Polarity protection applications

MAIN CHARACTERISTICS

IF(AV)

10(2×5)A

VF(max)

0.7V (@Tj=125°C)

Tj

175 °C

VRRM

100 V

PRODUCT MESSAGE

Model

Marking

Package

MBR10100

MBR10100

TO-220C

MBRF10100

MBRF10100

TO-220F

MBR10100S

MBR10100S

TO-263

MBR10100R

MBR10100R

TO-252

MBR10100V

MBR10100V

TO-251

MBR10100C

MBR10100C

TO-220

ABSOLUTE RATINGS (Tc=25°C)

Parameter

Symbol

Value

Unit

Repetitive peak reverse voltage

VRRM

100

V

Maximum DC blocking voltage

VDC

100

V

Average forward current

TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)

per device

per diode

IF(AV)

10 5

A

Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)

IFSM

120

A

Maximum junction temperature

Tj

175

°C

Storage temperature range

TSTG

-40~+150

°C

High Current Resistance Schottky Diode For High Frequency Switch Power Supply
Product tags

smd resistor wattage

,

high voltage direct current

,

smd switching diode
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High Current Resistance Schottky Diode For High Frequency Switch Power Supply

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Product Detail
Brand Name :
Uchi
Model Number :
MBR20100
Certification :
CE / RoHS / ISO9001 / UL
Place of Origin :
Dongguan China
MOQ :
Negotiation
Price :
Negotiation
Contact Supplier
High Current Resistance Schottky Diode For High Frequency Switch Power Supply

Guangdong Uchi Electronics Co.,Ltd

Verified Supplier
12 Years
guangdong, dongguan
Since 2006
Business Type :
Manufacturer, Exporter
Main Products :
Metal Oxide Varistor, SMD Varistor, Thermally Protected Varistor
Total Annual :
1,500,000-2,500,000
Employee Number :
138~168
Certification Level :
Verified Supplier
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