SOT-323 high frequency low noise transistor(PNP)
ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)CBO | IC=100μA,IE=0 | 40 | V | ||
Collector-emitter breakdown voltage | V(BR)CEO | IC=2mA,IB=0 | 25 | V | ||
Emitter-base breakdown voltage | V(BR)EBO | IE=-100μA,IC=0 | 5 | V | ||
Collector cut-off current | ICBO | VCB=40V,IE=0 | 0.1 | μA | ||
Collector cut-off current | ICEO | VCE=20V,IB=0 | 0.1 | μA | ||
Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | μA | ||
DC current gain |
hFE | VCE=1V,IC=100mA | 120 | 400 | ||
VCE=1V,IC=800mA | 40 | |||||
Collector-emitter saturation voltage | VCE(sat) | IC=800 mA, IB= 80mA | 0.5 | V | ||
Base-emitter saturation voltage | VBE(sat) | IC=800 mA, IB= 80mA | 1.2 | V | ||
Base-emitter voltage | VBE | VCE=1V IC=10mA | 1 | V | ||
Transition frequency | fT | VCE=10V, IC= 50mA f=30MHz | 100 | MHz |
CLASSIFICATION OF hFE(1)
Rank | L | H | J |
Range | 120-200 | 200-350 | 300-400 |
TYPICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified