SOT-89 D882 Plastic-Encapsulate Transistors
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 40 | V |
VCEO | Collector-Emitter Voltage | 30 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current -Continuous | 3 | A |
PC | Collector Power Dissipation | 0.5 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
Collector-base breakdown voltage | V(BR)CBO | IC = 100μA, IE=0 | 40 | V | ||
Collector-emitter breakdown voltage | V(BR)CEO | IC = 10mA, IB=0 | 30 | V | ||
Emitter-base breakdown voltage | V(BR)EBO | IE= 100μA, IC=0 | 6 | V | ||
Collector cut-off current | ICBO | VCB= 40V, IE=0 | 1 | µA | ||
Collector cut-off current | ICEO | VCE= 30V, IB=0 | 10 | µA | ||
Emitter cut-off current | IEBO | VEB= 6V, IC=0 | 1 | µA | ||
DC current gain | hFE(1) | VCE=2V, IC= 1A | 60 | 400 | ||
hFE(2) | VCE=2V, IC= 100mA | 32 | ||||
Collector-emitter saturation voltage | VCE(sat) | IC= 2A, IB= 0.2 A | 0.5 | V | ||
Base-emitter saturation voltage | VBE(sat) | IC= 2A, IB= 0.2 A | 1.5 | V | ||
Transition frequency | fT | VCE= 5V , Ic=0.1A f =10MHz | 50 | MHz |
CLASSIFICATION OF hFE(1)
Rank | R | O | Y | GR |
Range | 60-120 | 100-200 | 160-320 | 200-400 |
Typical Characteristics