Specifications
Gate-Emitter Leakage Current : :
+/- 200 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
86 A
Pd - Power Dissipation : :
357 W
Collector- Emitter Voltage VCEO Max : :
3 kV
Package / Case : :
ISOPLUS i4-Pak-3
Maximum Operating Temperature : :
+ 150 C
Maximum Gate Emitter Voltage : :
+/- 25 V
Configuration : :
Single
Collector-Emitter Saturation Voltage : :
2.7 V
Manufacturer : :
IXYS
Description :
IGBT Transistors High Voltage High Gain BIMOSFET
Description
The IXBF55N300,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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IXBF55N300

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Gate-Emitter Leakage Current : :
+/- 200 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
86 A
Pd - Power Dissipation : :
357 W
Collector- Emitter Voltage VCEO Max : :
3 kV
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IXBF55N300
IXBF55N300
IXBF55N300

UDEL Chips Tech Co., Ltd.

Verified Supplier
1 Years
shenzhen
Since 2013
Business Type :
Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company, Seller
Total Annual :
1.000.000.00-30.000.000.00
Employee Number :
15~25
Certification Level :
Verified Supplier
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