Gate-Emitter Leakage Current : :
+/- 200 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
86 A
Pd - Power Dissipation : :
357 W
Collector- Emitter Voltage VCEO Max : :
3 kV
Package / Case : :
ISOPLUS i4-Pak-3
Maximum Operating Temperature : :
+ 150 C
Maximum Gate Emitter Voltage : :
+/- 25 V
Collector-Emitter Saturation Voltage : :
2.7 V
Description :
IGBT Transistors High Voltage High Gain BIMOSFET