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Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W
Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W
Specifications
Brand Name :
VBE
Model Number :
VBE6006H
Certification :
ISO
Place of Origin :
CHINA
MOQ :
1pcs
Supply Ability :
10K
Delivery Time :
5-8 working days
Packaging Details :
Neutral Packing
Condition :
Brand New and Original
Description

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W'

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Product tags

high frequency pcb

,

high power rf transistor

,

rf high power transistor
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Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

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Product Detail
Brand Name :
VBE
Model Number :
VBE6006H
Certification :
ISO
Place of Origin :
CHINA
MOQ :
1pcs
Supply Ability :
10K
Contact Supplier
Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

VBE Technology Shenzhen Co., Ltd.

Verified Supplier
8 Years
guangdong, shenzhen
Since 2010
Main Products :
Cell Phone Signal Jammer, Wifi Signal Jammer, Handheld Signal Jammer
Total Annual :
5000000-10000000
Employee Number :
100~150
Certification Level :
Verified Supplier
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