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DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
Specifications
Brand Name :
VBE
Model Number :
VBE6006H
Certification :
ISO
Place of Origin :
CHINA
MOQ :
1pcs
Supply Ability :
10K
Delivery Time :
5-8 working days
Packaging Details :
Neutral Packing
Condition :
Brand New and Original
Description

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

Product tags

rf power mosfet transistors

,

rf mosfet power transistor

,

power rf mosfet
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DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

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Product Detail
Brand Name :
VBE
Model Number :
VBE6006H
Certification :
ISO
Place of Origin :
CHINA
MOQ :
1pcs
Supply Ability :
10K
Contact Supplier
DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

VBE Technology Shenzhen Co., Ltd.

Verified Supplier
8 Years
guangdong, shenzhen
Since 2010
Main Products :
Cell Phone Signal Jammer, Wifi Signal Jammer, Handheld Signal Jammer
Total Annual :
5000000-10000000
Employee Number :
100~150
Certification Level :
Verified Supplier
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