0.07 Bar ~35 Bar Flush Diaphragm Pressure Sensor Cell Small Size
high-stability, high-precision silicon pressure chip with piezoresistive chip. It adopts stress-optimized design of sintered seat, through patch, gold wire bonding, diaphragm welding, high vacuum oil injection, pressure cycle destressing.
Description
Based advanced ion implantation and micro-mechanical processing technology,PS21 TO8 housing piezoresistive pressure sensor is manufactured based on silicon chip which has Wheatstone Bridges and precise mechanical structure.
The measured pressure acts on silicon die through pressure port directly, and the pressure value is transformed to output voltage signal in linearity-relationship.
The pressure sensor is temperature compensated by means of laser trimmed technologies, TO8 housing makes it suitable for PCB mounting application, or installed in small space fields for pressure measurement of gas or liquid media.
PS21 pressure sensor has been widely used for air pressure control, physiology guarding, medicine equipment.
Speifications
Pressure medium | non-conductive & non-corrosive gas or liquid | ||
Pressure ranges | 0~0.07 bar 0.07bar ~35bar | ||
Pressure type | gauge (G), absolute (A), sealed gauge (S) | ||
Overload pressure | 150%F.S. | ||
Output signal | 70mV (typical) | ||
Accuracy | 0.25%FS (standard) 0.5%FS | ||
Zero offset | ≤±2mV | ||
Long term stability | <0.2%FS/year | ||
Excitation | 1.5mA | ||
Compensated Temp. | 0°c ~+50°c | ||
Operating Temp. | -40~+125°c | ||
Storage Temp. | -40~+125°c | ||
Zero Temp. Coefficient | 0.25%F.S./ 10 °c | ||
Span Temp. Coefficient | 0.2%F.S./ 10°c | ||
Bridge Resistance | Min. | Max. | Unit |
2600 | 5500 | ohm | |
Vibration | 20g (20— 5000HZ) | ||
Response time | ≤1ms | ||
Electrical connection | 6-pin(gold –plated kovar pins) | ||
Material of housing | 316L | ||
Position effect | deviate 90° at any direction, zero change ≤ 0.05%FS | ||
Impact | 1oog,11ms | ||
Net weight | 4g |